Laser heating & bonding system
The process of laser heating Si wafer
Laser bonding system
Laser Transmission Bonding with selective heat input allows a small heat-affected zone (HAZ) along the bonding frames. The chips can thus be joined without any temperature load in the functional area on Wafer Level or Chip-Level.
Application
Wafer to wafer laser bonding
Glass to wafer laser bonding
Die on wafer laser bonding
Features
Multi-wavelength laser, from NUV to NIR laser
Localized temperature monitor on laser heating / bonding area
Precisely feedback for heating / bonding temperature control
Co-axial image
Specification
Temperature detection range: 473 K to 1800 K (typical)
Laser spot size: < 500 um